Size-dependent Photoconductivity in MBE-Grown GaN−Nanowires
نویسندگان
چکیده
منابع مشابه
Size-dependent photoconductivity in MBE-grown GaN-nanowires.
We report on electrical transport in the dark and under ultraviolet (UV) illumination through GaN nanowhiskers grown by molecular beam epitaxy (MBE), which is sensitively dependent on the column diameter. This new effect is quantitatively described by a size dependent surface recombination mechanism. The essential ingredient for the interpretation of this effect is a diameter dependent recombin...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2005
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl0500306